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Simulation of silicon-dot-based single-electron memory devices

: Klüpfel, Fabian Johannes; Burenkov, Alexander; Lorenz, Jürgen

Postprint urn:nbn:de:0011-n-4213199 (630 KByte PDF)
MD5 Fingerprint: 317be83922c300edacc4380e42276e0c
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Created on: 3.5.2019

Bär, E. ; Institute of Electrical and Electronics Engineers -IEEE-; Deutsche Forschungsgemeinschaft -DFG-, Bonn:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 : September 6-8, 2016, Nuremberg, Germany
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-0818-6 (Online)
ISBN: 978-1-5090-0816-2 (CD-ROM)
ISBN: 978-1-5090-0819-3
ISBN: 978-1-5090-0817-9
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2016, Nuremberg>
European Commission EC
H2020; 688072; IONS4SET
Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology
Conference Paper, Electronic Publication
Fraunhofer IISB ()
Quantum Dot; single electron memory; numerical simulation; tunneling rate; charge state

Electrical properties of silicon-dot-based single-electron memory devices were investigated using numerical simulation. For an accurate calculation of tridimensional electron wave functions in the dots and in the dot-isolation surrounding the nextnano++ simulator was employed. Tunneling rates between the dot and other electrodes were calculated using a post-processing of the electron-state-specific wave functions on the dots and in the electrical contacts. The charge state of the dots was evaluated using the master equation approach. The simulation model was verified by a comparison of simulated and measured charge state life times in a prototype of a single-electron memory device.