Abstract
A successful application of carrier selective contacts was demonstrated by using the tunnel oxide passivated contact (TOPCon) approach yielding a 24.9% efficient solar cell. A key factor of this contact is the ultra-thin SiOx tunnel layer which reduces interface recombination significantly but must not restrict carrier flow. Within this paper a comparison between the standard wet-chemical HNO3 oxide, a dry-grown UV/O3 oxide, and a wet-chemically grown oxide by using ozonized DI-H2O is drawn. The oxides’ stoichiometry and structure are analyzed and will be set in relation with the effective surface passivation. It will be demonstrated that beneath certain UV/O3 oxides also wet-chemically grown oxides offer a high thermal stability during the annealing and can improve the passivation of n-TOPCon, especially on textured surfaces.