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  4. Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water
 
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2015
Conference Paper
Title

Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water

Abstract
A successful application of carrier selective contacts was demonstrated by using the tunnel oxide passivated contact (TOPCon) approach yielding a 24.9% efficient solar cell. A key factor of this contact is the ultra-thin SiOx tunnel layer which reduces interface recombination significantly but must not restrict carrier flow. Within this paper a comparison between the standard wet-chemical HNO3 oxide, a dry-grown UV/O3 oxide, and a wet-chemically grown oxide by using ozonized DI-H2O is drawn. The oxides' stoichiometry and structure are analyzed and will be set in relation with the effective surface passivation. It will be demonstrated that beneath certain UV/O3 oxides also wet-chemically grown oxides offer a high thermal stability during the annealing and can improve the passivation of n-TOPCon, especially on textured surfaces.
Author(s)
Moldovan, A.
Feldmann, F.
Kaufmann, K.
Richter, S.
Werner, M.
Hagendorf, C.
Zimmer, M.
Rentsch, J.
Hermle, M.
Mainwork
IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015  
Conference
Photovoltaic Specialists Conference (PVSC) 2015  
Open Access
File(s)
Download (385.41 KB)
DOI
10.24406/publica-r-389829
10.1109/PVSC.2015.7356144
Language
English
CSP
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • PV Produktionstechnologie und Qualitätssicherung

  • Silicium-Photovoltaik

  • Oberflächen - Konditionierung

  • Passivierung

  • Lichteinfang

  • Herstellung und Analyse von hocheffizienten Solarzellen

  • carrier-selective contacts

  • oxide

  • photo-oxidation

  • oxidation

  • ozone

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