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Investigations on AlxGa1-xAs solar cells grown by MOVPE

: Heckelmann, S.; Lackner, D.; Karcher, C.; Dimroth, F.; Bett, A.W.

Postprint urn:nbn:de:0011-n-3372831 (648 KByte PDF)
MD5 Fingerprint: a2423be2cd9f0dab160e9244cccecc50
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Created on: 23.6.2016

IEEE Journal of Photovoltaics 5 (2015), No.1, pp.446-453
ISSN: 2156-3381
Journal Article, Electronic Publication
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; multijunction solar cells; heterojunctions; cells; impurities

Solar cells based on AlxGa1-xAs in its direct bandgap range were fabricated and analyzed. We show that state-of-the-art metalorganic vapor phase epitaxy systems and precursors are capable of growing AlxGa1-xAs solar cells with defect concentrations up to 1 × 1014 cm-3 and less determined by deep level transient spectroscopy. However, for the n-doped material, inevitable DX-centers exist. These dopant-related defects limit the performance of the investigated AlxGa1-xAs solar cells with x ≥ 0.20. To overcome this issue, the n-doped AlxGa1-xAs As emitter can be replaced by an n-doped Ga0.51In0.49P heteroemitter. This heterojunction solar cell again shows overall defect concentrations below 1 × 1014 cm-3 and significantly improved cell characteristics.