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  4. Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon
 
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2014
Journal Article
Title

Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon

Abstract
Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this research is to combine the advantages of high efficiencies in III-V tandem solar cells with the low cost of silicon. Direct epitaxial growth of a GaInP/GaAs dual-junction solar cell on a GaAsyP1-y buffer on silicon yielded a 1-sun efficiency of 16.4% (AM1.5g). Threading dislocations that result from the 4% lattice grading are still the main limitation to the device performance. In contrast, similar devices fabricated by semiconductor wafer bonding on n-type inactive Si reached efficiencies of 26.0% (AM1.5g) for a 4-cm2 solar cell device.
Author(s)
Dimroth, Frank  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Roesener, Tobias
Fraunhofer-Institut für Solare Energiesysteme ISE  
Essig, Stephanie
Fraunhofer-Institut für Solare Energiesysteme ISE  
Weuffen, Christoph
Fraunhofer-Institut für Solare Energiesysteme ISE  
Wekkeli, Alexander  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Oliva, Eduard  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Siefer, Gerald  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Volz, Kerstin
Uni Marburg
Hannappel, Thomas
TU Ilmenau
Häussler, Dietrich
Uni Kiel
Jäger, Wolfgang
Uni Kiel
Bett, Andreas W.  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Journal
IEEE Journal of Photovoltaics  
Project(s)
NGCPV  
III-V-Si
Funder
European Commission EC  
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
File(s)
Download (595.92 KB)
Rights
Use according to copyright law
DOI
10.1109/jphotov.2014.2299406
10.24406/publica-r-236434
Additional link
Landing Page
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Materialien - Solarzellen und Technologie

  • III-V und Konzentrator-Photovoltaik

  • III-V Epitaxie und Solarzellen

  • bonding

  • Silicium

  • wafer bonding

  • III-V auf Silicium

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