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On the strain induced by arsenic into silicon

Über die durch Arsen in Silicium hervorgerufene Gitterverzerrung
: Koffel, Stéphane; Pichler, Peter; Lorenz, Jürgen; Bisognin, Gabriele; Napolitani, Enrico; Salvador, Davide de

Postprint urn:nbn:de:0011-n-2832252 (399 KByte PDF)
MD5 Fingerprint: 2a4b2c7d0573192a67c52ffa185a6884
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Created on: 12.6.2014

Institute of Electrical and Electronics Engineers -IEEE-:
ESSDERC 2013, Proceedings of the 43rd European Solid-State Device Research Conférence : Bucharest, Romania, September 16-20, 2013
Piscataway, NJ: IEEE, 2013
ISBN: 1-4799-0647-6
ISBN: 978-1-4799-0647-5
European Solid-State Device Research Conference (ESSDERC) <43, 2013, Bucharest>
Conference Paper, Electronic Publication
Fraunhofer IISB ()
arsenic; silicon; strain; HRXRD

The strain induced by substitutional arsenic into the silicon lattice was investigated experimentally. First, a combination of multiple implantations was used to obtain a flat arsenic profile in the first 150 nm of the substrate. Although a full activation of the dopants could be achieved, the EOR defects resulting from the implants were not dissolved and prevented reliable strain measurements. A single implantation was then used. Annealing conditions were carefully chosen to obtain a nearly flat arsenic profile in the first 400 nm of the substrate and to dissolve the EOR defects. Sheet resistance, TEM and RBS measurements confirmed the full activation of the samples and the dissolution of the EOR defects. HRXRD was then used to characterize the strain. The interpretation of the measuremen ts via strain simulation indicated a lattice strain of (-1.5 ± 0.7)×10-5 associated with a lattice contraction at a concentration of 2×1020 cm-3. This value is significantly lower than the values reported in literature.