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Analytical modeling of industrial-related silicon solar cells

: Fellmeth, T.; Clement, F.; Biro, D.

Fulltext urn:nbn:de:0011-n-2797807 (512 KByte PDF)
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Created on: 18.2.2016

IEEE Journal of Photovoltaics 4 (2014), No.1, pp.504-513
ISSN: 2156-3381
Journal Article, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; III-V und Konzentrator-Photovoltaik; Herstellung von hocheffizienten Solarzellen; Pilotherstellung von industrienahen Solarzellen; Silicium-Konzentratorsolarzelle; Industrielle und neuartige Solarzellenstrukturen; cells; modeling; Emitter; MWT

Fast and accurate simulation tools are key to increasing our understanding of silicon-based solar cells. A lucid graphical unit interface and experimentally obtained input parameters help make these tools accessible for a wide range of users. In this paper, we present a fast Excel tool based on the well-known two-diode model supporting conventional and metal-wrap-through cell architectures. The selective emitter approach, spatial varying emitter recombination, and optical simulations are taken into account. A set of consistent input parameters, including the emitter recombination in the passivated case, as well as the metal contacted for both idealities, are given as a function of the emitter sheet resistance. This set on input parameters is associated with industrial-related technologies for conventional and metal-wrap-through silicon solar cells.