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Extended model for platinum diffusion in silicon

Erweitertes Modell für die Diffusion von Platin in Silicium
 
: Badr, E.; Pichler, P.; Schmidt, G.

:
Postprint urn:nbn:de:0011-n-2470448 (233 KByte PDF)
MD5 Fingerprint: be807b3ac8b5c7c0602ec3d37fc55452
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Created on: 4.7.2013


Institute of Electrical and Electronics Engineers -IEEE-:
PRIME 2013, 9th Conference on Ph.D. Research in Microelectronics and Electronics : Villach, Austria, June 24th-27th, 2013
New York, NY: IEEE, 2013
ISBN: 978-1-4673-4580-4 (Print)
pp.253-256
Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) <9, 2013, Villach>
English
Conference Paper, Electronic Publication
Fraunhofer IISB ()
platinum diffusion; silicon; DLTS

Abstract
Close to the wafer surfaces, our platinum diffusion experiments were found to be at gross discrepancy with the predictions of well-established diffusion models. These differences are associated with the ramping-down of the temperature at the end of the diffusion processes. To obtain a consistent model able to explain the experiments reported previously in the literature together with our experiments, energy barriers had to be included for the various reactions rate. For the Frank-Turnbull, kick-out and bulk recombination reactions, barrier heights of 0.55, 0.16, and 0.57 eV were determined, respectively. The newly established model is able to reproduce platinum diffusion for a considerably wider range of experimental conditions than models before.

: http://publica.fraunhofer.de/documents/N-247044.html