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On the calculation of hall factors for the characterization of electronic devices

Über die Berechnung von Hallfaktoren für die Charakterisierung von elektronischen Bauelementen
: Uhnevionak, V.; Burenkov, A.; Pichler, P.

Postprint urn:nbn:de:0011-n-2470436 (207 KByte PDF)
MD5 Fingerprint: d4bff17ada7cf0475163beb9ba0ab22d
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Created on: 4.7.2013

Institute of Electrical and Electronics Engineers -IEEE-:
PRIME 2013, 9th Conference on Ph.D. Research in Microelectronics and Electronics : Villach, Austria, June 24th-27th, 2013
New York, NY: IEEE, 2013
ISBN: 978-1-4673-4580-4 (Print)
Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) <9, 2013, Villach>
Bundesministerium für Bildung und Forschung BMBF
01SF0804; MobiSiC
Conference Paper, Electronic Publication
Fraunhofer IISB ()
hall factor; hall measurements; relaxation (scattering) time; mobility; bulk silicon

In this work, a new method for the calculation of Hall factors is described. It is based on the interdependence with mobility components via the respective relaxation (scattering) times. The new method allows an accurate determination of mobility and carrier sheet concentration from Hall-effect measurements and can not only be applied to homogeneously doped substrates but also at the interfaces of electronic devices such as field-effect transistors. To demonstrate the general applicability of the method, we use it to predict the dependence of the Hall factor on dopant concentration in silicon and compare it with measured Hall factors reported in the literature.