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2012
Journal Article
Titel
Quantum efficiency determination of a novel CMOS design for fast imaging applications in the extreme ultraviolet
Abstract
We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.
Author(s)