Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Quantum efficiency determination of a novel CMOS design for fast imaging applications in the extreme ultraviolet
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Postprint urn:nbn:de:0011-n-1958900 (378 KByte PDF) MD5 Fingerprint: 1938de1f40425006a671ac37e9b826da © IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. Created on: 1.10.2016 |
| IEEE transactions on electron devices 59 (2012), No.3, pp.846-849
ISSN: 0018-9383 |
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| English |
| Journal Article, Electronic Publication |
| Fraunhofer IMS ()
Fraunhofer ILT () |
| defect inspection; extreme ultraviolet (EUV) complementary metal-oxide-semiconductor (CMOS); EUV microscopy; CMOS; Bildsensor; EUV; EUV-L; DOSE; EUV CMOS image sensor |
Abstract
We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.