• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Quantum efficiency determination of a novel CMOS design for fast imaging applications in the extreme ultraviolet
 
  • Details
  • Full
Options
2012
Journal Article
Title

Quantum efficiency determination of a novel CMOS design for fast imaging applications in the extreme ultraviolet

Abstract
We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.
Author(s)
Herbert, Stefan
Banyay, Matus
Maryasov, Alexey
Hochschulz, Frank  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Paschen, Uwe
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Vogt, Holger
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Juschkin, Larissa
Journal
IEEE transactions on electron devices  
Open Access
File(s)
Download (379 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-r-228105
10.1109/TED.2011.2177838
Language
English
Fraunhofer-Institut für Lasertechnik ILT  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • defect inspection

  • extreme ultraviolet (EUV) complementary metal-oxide-semiconductor (CMOS)

  • EUV microscopy

  • CMOS

  • Bildsensor

  • EUV

  • EUV-L

  • DOSE

  • EUV CMOS image sensor

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024