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Surface passivation of InGaAs/InP HBTs using atomic layer deposited Al(2)O(3)

: Driad, R.; Benkhelifa, F.; Kirste, L.; Lösch, R.; Mikulla, M.; Ambacher, O.


Sah, R.E. ; Electrochemical Society -ECS-, Dielectric Science and Technology Division:
Silicon nitride, silicon dioxide, and emerging dielectrics 11 : Full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics to be held May 1 - 6, 2011 in Montreal, Canada, as part of the 219th meeting of the Electrochemical Society (ECS)
Pennington, NJ: ECS, 2011 (ECS transactions 35, 4)
ISBN: 978-1-56677-865-7
ISBN: 978-1-60768-215-8
ISSN: 1938-5862
International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics <11, 2011, Montreal>
Electrochemical Society (Meeting) <219, 2011, Montreal>
Conference Paper
Fraunhofer IAF ()

In this contribution, we investigate the Al2O3 surface passivation of InGaAs/InP heterostructures using thermal atomic layer deposition (ALD) with water vapor, and plasma ALD with oxygen plasma. The microstructure and optical properties of the Al2O3 layers are examined by X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) on InGaAs/InP epilayers and Si substrates. The dc current gain and breakdown voltage of InGaAs/InP heterostructure bipolar transistors (HBTs) have subsequently been used to evaluate the impact and efficiency of the ALD-Al2O3
passivation layers. The thermal-ALD-Al2O3 passivated InGaAs/InP HBTs show relatively higher current gains as
compared to structures passivated using the plasma-ALD process, suggesting differences in the dielectric-semiconductor interface properties. The common emitter characteristics of both (thermal and plasma) ALD-Al2O3 passivated HBTs show, however, fairly comparable device breakdown voltages. These results will be contrasted with results from similar samples passivated with SiO2 using conventional plasma enhanced chemical vapor deposition