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Surface passivation of InGaAs/InP HBTs using atomic layer deposited Al(2)O(3)

 
: Driad, R.; Benkhelifa, F.; Kirste, L.; Lösch, R.; Mikulla, M.; Ambacher, O.

:

Sah, R.E. ; Electrochemical Society -ECS-, Dielectric Science and Technology Division:
Silicon nitride, silicon dioxide, and emerging dielectrics 11 : Full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics to be held May 1 - 6, 2011 in Montreal, Canada, as part of the 219th meeting of the Electrochemical Society (ECS)
Pennington, NJ: ECS, 2011 (ECS transactions 35, 4)
ISBN: 978-1-56677-865-7
ISBN: 978-1-60768-215-8
ISSN: 1938-5862
pp.205-216
International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics <11, 2011, Montreal>
Electrochemical Society (Meeting) <219, 2011, Montreal>
English
Conference Paper
Fraunhofer IAF ()

Abstract
In this contribution, we investigate the Al2O3 surface passivation of InGaAs/InP heterostructures using thermal atomic layer deposition (ALD) with water vapor, and plasma ALD with oxygen plasma. The microstructure and optical properties of the Al2O3 layers are examined by X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) on InGaAs/InP epilayers and Si substrates. The dc current gain and breakdown voltage of InGaAs/InP heterostructure bipolar transistors (HBTs) have subsequently been used to evaluate the impact and efficiency of the ALD-Al2O3
passivation layers. The thermal-ALD-Al2O3 passivated InGaAs/InP HBTs show relatively higher current gains as
compared to structures passivated using the plasma-ALD process, suggesting differences in the dielectric-semiconductor interface properties. The common emitter characteristics of both (thermal and plasma) ALD-Al2O3 passivated HBTs show, however, fairly comparable device breakdown voltages. These results will be contrasted with results from similar samples passivated with SiO2 using conventional plasma enhanced chemical vapor deposition
(PECVD).

: http://publica.fraunhofer.de/documents/N-178173.html