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  4. Thermal oxidation as a key technology for high efficiency screen printed industrial silicon solar cells
 
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2009
Conference Paper
Title

Thermal oxidation as a key technology for high efficiency screen printed industrial silicon solar cells

Abstract
In this paper various options to integrate thermal oxidation into industrial cell production are presented, maintaining large parts of the standard cell fabrication process. Both the use of thin (15 nm) and thick (200 nm) wet thermally grown oxides are successfully implemented into pilot production at the Fraunhofer production research platform PV-TEC [1]. Solar cells are fabricated with both type of processes. On large area (149mm 2) Cz-Si substrates 18% efficiency have been achieved. Furthermore a cost calculation including process and equipment improvements is carried out for the thermal oxidation process and it is shown that the cost for such a process can be well below 10ct per wafer for thick and below 5 ct per wafer for a thin oxide, thus meeting industrial requirements for cost effective production.
Author(s)
Biro, Daniel  
Mack, Sebastian  
Wolf, Andreas  
Lemke, Anke
Belledin, Udo  
Erath, Denis
Holzinger, B.
Wotke, Edgar Allan
Hofmann, Marc  
Gautero, L.
Nold, Sebastian  
Rentsch, Jochen  
Preu, Ralf  
Mainwork
34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Vol.2  
Conference
Photovoltaic Specialists Conference (PVSC) 2009  
Open Access
File(s)
Download (114.92 KB)
Rights
Use according to copyright law
DOI
10.1109/PVSC.2009.5411381
10.24406/publica-r-365569
Additional link
Full text
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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