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Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors

: Walther, S.; Polster, S.; Meyer, B.; Jank, M.; Ryssel, H.; Frey, L.

Postprint urn:nbn:de:0011-n-1514678 (586 KByte PDF)
MD5 Fingerprint: d92fd61d901a6610558b40994dec9af2
Copyright AIP
Created on: 3.2.2011

Journal of vacuum science and technology B. Microelectronics and nanometer structures 29 (2011), No.1, Art. 01A601, 6 pp.
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
Workshop on Dielectrics in Microelectronics (WoDiM) <16, 2010, Bratislava>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer IISB ()
carrier mobility; II-VI semiconductors; nanoparticle; semiconductor thin films; silicon compound; thin film transistor; wide band gap semiconductors; zinc compounds; ZnO; SiO2; Si3N4

In this paper, we report on thin film transistors based on gas phase synthesized ZnO nanoparticles using low temperature deposited silicon dioxide and silicon nitride as gate dielectrica. For bottom gate transistors, the devices using silicon nitride as gate insulator show the lowest off-current for a given induced charge and the steepest subthreshold slope. The charge carrier mobility of around 3x10-3 cm2/Vs and an Ion/Ioff ratio of around 105 are almost independent of the insulator material. In a double gated thin film transistor using low stress silicon nitride as top gate insulator, transistor parameters are extracted for the identical semiconducting layer when the bottom gate is used and when the top gate is used, respectively. It is shown that the extracted charge carrier mobil ity is not inherent for the ZnO nanoparticle layer but rather an effective value for the device under investigation.