Schwantuschke, DirkDirkSchwantuschkeBrueckner, PeterPeterBruecknerAmirpour, RaulRaulAmirpourTessmann, AxelAxelTessmannKuri, MichaelMichaelKuriRießle, MarkusMarkusRießleMassler, HermannHermannMasslerQuay, RüdigerRüdigerQuay2022-03-142022-03-142018https://publica.fraunhofer.de/handle/publica/40182410.23919/EuMIC.2018.85399402-s2.0-85059783799This work presents a balanced GaN-based power amplifier targeting the entire V-band frequency range. The fabricated chip was packaged in a split block WR-15 waveguide environment to make it applicable for high-power measurement applications. The designed GaN MMIC provides a high small signal gain of more than 20 dB within a frequency range of 49 GHz up to 83 GHz. On-wafer large-signal measurements of the MMIC at 75 GHz demonstrate a linear gain of 26.3 dB, along with a saturated output power of 29.3 dBm (850 mW) and a maximum power added efficiency of 13.5 %. For the assembled module, an average saturated output power of 28.1 dBm (645 mW) within a variance of ±0.4 dB has been measured for the entire V-band (50-75 GHz).enV-band power amplifierpower amplifier modulemonolithic microwave integrated circuit (MMIC)aluminum gallium nitridegallium nitride667conference paper