Jähne, R.R.JähneBudde, W.W.BuddeGottfried-Gottfried, R.R.Gottfried-GottfriedKück, H.H.KückMüller, M.M.Müller2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/322818We report on a fully CMOS compatible infrared sensor with integrated signal amplification electronics. The IR sensor consists of 60 thermocouples of p+ doped silicon and n-doped polysilicon electrically connected in series. Local SOI and an additional step of anisotropic backside etching have been used to achieve a good thermal isolation between the hot and the cold junctions of the sensor. The signal amplification electronics has been realized using fully differential switched capacitor design techniques manufactured in a 2mym n-well CMOS-technology.enInfrarotdetektorintegrierte HalbleiterschaltungMeßaufnehmerPyrometrieStrahlungsmessung621conference paper