Power Module Design for GaN Transistors Enabling High Switching Speed in Multi-Kilowatt Applications

CC BY 4.0Wöhrle, DennisDennisWöhrleBurger, BrunoBrunoBurgerAmbacher, OliverOliverAmbacher2023-12-152023-12-152023Note-ID: 0000898Ahttps://publica.fraunhofer.de/handle/publica/458052https://doi.org/10.24406/publica-231910.1002/ente.20230046010.24406/publica-2319The advantages of gallium nitride (GaN) and silicon carbide (SiC) transistors over silicon (Si) devices are highlighted. The design criteria for power modules in multi-kilowatt applications to effectively leverage these advantages are described. Various concepts to overcome limitations associated with state-of-the-art power module packaging presented in the literature are summarized and evaluated. A novel power module design comprising a 650V, 300A half-bridge with integrated DC-link and gate drivers is proposed. The results of a finite element analysis (FEA) of its parasitic elements and subsequent double pulse test simulation are presented.enGallium nitride (GaN)Highly efficient power electronicsHigh switching speedPower module packagingSilicon carbide (SiC)Wide-bandgap (WBG)Power Module Design for GaN Transistors Enabling High Switching Speed in Multi-Kilowatt Applicationsjournal article