Mart, C.C.MartViegas, A.A.ViegasEßlinger, S.S.EßlingerCzernohorsky, M.M.CzernohorskyWeinreich, W.W.WeinreichMutschall, D.D.MutschallKaiser, A.A.KaiserNeumann, N.N.NeumannGroßmann, T.T.GroßmannHiller, K.K.HillerEng, L.M.L.M.Eng2022-03-152022-03-152020https://publica.fraunhofer.de/handle/publica/41239010.1109/IFCS-ISAF41089.2020.92348922-s2.0-85096960911Nanometer-thin ferroelectric hafnium oxide (HfO 2) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO 2 in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf 0.5 Zr 0.5 O 2 mixed oxide.en621conference paper