Ralston, J.D.J.D.RalstonWeisser, S.S.WeisserEisele, K.K.EiseleSah, R.E.R.E.SahLarkins, E.C.E.C.LarkinsRosenzweig, JosefJosefRosenzweigFleissner, J.J.FleissnerBender, K.K.Bender2022-03-032022-03-031994https://publica.fraunhofer.de/handle/publica/18485110.1109/68.324673Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 mym2 In0.35 Ga0.65 As/GaAs multiple quantum well ridge-waveguide lasers with undoped and p-doped active regions, respectively. These performance enhancements have been achieved both by lowering the growth temperature of the high-Al-mole-fraction cladding layers and by utilizing short-cavity devices, fabricated with dry-etched facts using chemically-assisted ion-beam etching. Both the undoped and p-doped lasers also demonstrate modulation current efficiency factors exeeding 5 GHz/mA 1/2, the best reported results for any semiconductor laser.enhigh-speed modulationHochgeschwindigkeitsmodulationion beam etchingIonenstrahlätzungMBEquantum well lasers621667535journal article