Büchler, AndreasAndreasBüchlerNagel, HenningHenningNagelBreitwieser, MatthiasMatthiasBreitwieserKluska, SvenSvenKluskaHeinz, Friedemann D.Friedemann D.HeinzSchubert, Martin C.Martin C.SchubertGlatthaar, MarkusMarkusGlatthaarGlunz, Stefan W.Stefan W.Glunz2022-03-142022-03-142017https://publica.fraunhofer.de/handle/publica/40479510.1109/PVSC.2017.8521474Solar cells showing shunts due to potential-induced degradation (PID-s) were investigated by combining electron-beam induced current (EBIC), microscopic light beam induced current (mLBIC) and microscopic Raman spectroscopy (mRS) at the same positions with high local resolution. A direct correlation of compressive stress measured by mRS and local shunting as observed by mLBIC was found. Comparing mRS mappings before and after degradation proves that stress is induced locally by PID-s which can be explained by the formation of sodium decorated stacking faults.enHocheffiziente Siliciumsolarzellen und neuartige ProzesseSolarzellen - Entwicklung und CharakterisierungPhotovoltaikSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienMikrocharacterisierungµLBICPID-SSpektroskopie621697conference paper