Jiang, X.X.JiangKlages, C.-P.C.-P.KlagesZachai, R.R.ZachaiHartweg, M.M.HartwegFüßer, H.-J.H.-J.Füßer2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18282310.1063/1.109041Epitaxial (001) diamond films were grown on mirror- polished monocrystalline (001) silicon substrates by microwave plasma chemical vapour deposition from a methane/hydrogen gas mixture. The films were characterized by means of scanning electron microscopy, Raman spectroscopy and X-ray analysis. The results show that the diamond crystallites are oriented to the silicon substrate with both the (001) planes and the (110) directions parallel to the silicon substrate.en001 Silicium001 siliconbias voltageBiasspannungDiamantdiamondEpitaxieepitaxyhydrogenMethanmethanemicrowave plasma CVDMikrowellen-Plasma-CVDnucleationNukleationOrientierungoritationWasserstoff667621journal article