Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4

Köhler, KlausKlausKöhlerSchweizer, T.T.SchweizerGanser, P.P.GanserHiesinger, P.P.HiesingerRothemund, W.W.Rothemund2022-03-092022-03-091994https://publica.fraunhofer.de/handle/publica/322382enelectrical propertyelektrische EigenschaftheterostructureHeterostrukturIII-V HalbleiterIII-V semiconductorspseudomorphes Wachstumpseudomorphic growth621667Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4conference paper