Burenkov, A.A.BurenkovHahn, A.A.HahnSpiegel, Y.Y.SpiegelEtienne, H.H.EtienneTorregrosa, F.F.Torregrosa2022-03-1127.10.20122012https://publica.fraunhofer.de/handle/publica/37666610.24406/publica-r-37666610.1063/1.4766531Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulation code. An analytical model of plasma immersion ion implantation that assumes a uniform and isotropic implantation was implemented in a software module called IMP3D. The functionality of this module which was initially envisaged for the three-dimensional simulation of conventional ion implantation was extended to plasma immersion ion implantation and examples of 2D and 3D simulations from this are presented.enBF3plasmaImmersionion implantationboronsilicon670620530conference paper