Kim, Y.Y.KimHeyne, B.B.HeyneGeßner, A.A.GeßnerPark, Y.Y.ParkKang, M.M.KangAhn, S.S.AhnLee, B.B.LeeWedel, A.A.Wedel2022-03-052022-03-052018https://publica.fraunhofer.de/handle/publica/25660110.1002/sdtp.122932-s2.0-85054029885We demonstrate efficient InP-based quantum dot (QD) LEDs utilizing a crosslinkable hole transport layers (HTL). The developed HTL exhibit great solvent resistance and smooth surface roughness. The influence of QD design, HTL structure as well as the corresponding processing of these materials on device performance was investigated.en668P-110: Efficient InP-based quantum dot light emitting diodes utilizing a crosslinkable hole transport layerjournal article