Jones, Alexander R.Alexander R.JonesCheng, XingruiXingruiChengParthasarathy, Shravan KumarShravan KumarParthasarathyArshad, Muhammad JunaidMuhammad JunaidArshadCilibrizzi, PasqualePasqualeCilibrizziNagy, RolandRolandNagySalter, Patrick S.Patrick S.SalterSmith, Jason M.Jason M.SmithBonato, CristianCristianBonatoBekker, Christiaan J.Christiaan J.Bekker2026-03-232026-03-232025https://publica.fraunhofer.de/handle/publica/51193710.1021/acs.nanolett.5c013252-s2.0-10500779701940494848The precise registration of solid-state quantum emitters to photonic structures is a major technological challenge for fundamental research (e.g. in cavity quantum electrodynamics) and applications to quantum technology. Standard approaches include the complex multistep fabrication of photonic structures on pre-existing emitters, both registered within a grid of lithographically-defined markers. Here, we demonstrate a marker-free, femtosecond laser writing technique to generate individual quantum emitters within photonic structures. Characterization of 28 defect centers, laser-written at the centers of pre-existing solid immersion lens structures, showed offsets relative to the photonic structure's center of 260 nm in the x-direction and 60 nm in the y-direction, with standard deviations of ± 170 and ± 90 nm, respectively, resulting in an average 4.5 times enhancement of the optical collection efficiency. This method is scalable for developing integrated quantum devices using spin-photon interfaces in silicon carbide and is easily extendable to other materials.entrueColor CentersFemtosecond Laser WritingQubitsScalable Quantum DevicesSilicon Carbidejournal article