Aschenbrenner, R.R.AschenbrennerOstmann, A.A.OstmannZakel, E.E.ZakelKasulke, P.P.Kasulke2022-03-082022-03-081997https://publica.fraunhofer.de/handle/publica/303632The contact bumps are intended for the bottom of integrated circuits, the metal deposition is formed on a metallising subsequently located under the contact bump, using external current-free process. Preferably an Ni or Au deposition is carried out on the metal bond pad, typically of Al, as an under-bump metallising, prior to depositing a thin plating base (5) in an external current-free process, the metal of the plating base is to be so selected that there is no permanent diffusion between under-metallising and metal contact bumps. USE/ADVANTAGE - For flip-chip or TAB technique, without need for high cost sputtering.de608621patent1996-DE206