Müller, RaphaelRaphaelMüllerGramich, VeraVeraGramichWauro, MatthiasMatthiasWauroNiemasz, JasminJasminNiemaszKirste, LutzLutzKirsteDaumer, VolkerVolkerDaumerJanaszek, A.A.JanaszekJurenczyk, J.J.JurenczykRehm, RobertRobertRehm2022-03-052022-03-052019https://publica.fraunhofer.de/handle/publica/25549310.1016/j.infrared.2018.10.0192-s2.0-85057085846We report on the development of InAs/GaSb type-II superlattice infrared photodetectors for operation under temperatures reachable with thermoelectric cooling. We investigate optically immersed, laterally operated photoconductors with a cutoff wavelength around 10 mm at an operating temperature of 200 K. The identification of a suitable superlattice composition, the growth of a linearly graded metamorphic buffer layer and the transfer of the device concept from GaSb to GaAs are motivated and described. We show that immersion lens technology even for non-doping optimized devices enables a peak spectral detectivity above 6×109 cm Hz0.5W−1 at 195 K, approaching the performance of commercially available HgCdTe-based photoconductors.enInAs/GaSbT2SLTECinfrared detectorsHOT667535journal article