Beling, A.A.BelingBach, H.-G.H.-G.BachMekonnen, G.G.G.G.MekonnenKunkel, R.R.KunkelSchmidt, D.D.Schmidt2022-03-032022-03-032005https://publica.fraunhofer.de/handle/publica/20902210.1109/LPT.2005.8563702-s2.0-26844433233A low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is presented. In order to maintain a high quantum efficiency, an optical matching layer exploiting mode beating effects is employed. Its optimization leads to a twofold enhanced external responsivity of 0.5 A/W at 1.55 µm wavelength in accordance with simulation. The reduced p-n junction capacitance enables 3 dB bandwidths up to 120 GHz mainly limited due to carrier transit time effects.en621535journal article