Sewergin, AlexanderAlexanderSewerginRittner, MartinMartinRittnerBurghardt, AndreasAndreasBurghardtKriegel, KaiKaiKriegelMitic, GerhardGerhardMiticZetterer, ThomasThomasZettererHutsch, ThomasThomasHutschNeumann, AlbertAlbertNeumannSimon, Flaviu-BogdanFlaviu-BogdanSimonDoncker, Rik W. deRik W. deDoncker2022-03-142022-03-142020https://publica.fraunhofer.de/handle/publica/407965This paper introduces a new switching cell design approach. While state-of-the-art power modules utilize bond wires and DBC-substrate, the proposed switching cell design focuses upon the elimination of bond wires in the power-loop by using a high temperature co-fired ceramics (HTCC) board. Moreover, the coefficients of thermal expansion (CTE) of the SiC-MOSFETs and the copper heat-sink are adapted through integrated copper-diamond (Cu-C) buffer layers.en620670620530660671conference paper