Bessemoulin, A.A.BessemoulinGrunenputt, J.J.GrunenputtFellon, P.P.FellonTessmann, AxelAxelTessmannKohn, E.E.Kohn2022-03-102022-03-102004https://publica.fraunhofer.de/handle/publica/345622This paper presents the performance of a W-band low noise amplifier MMIC, based on coplanar technology, and utilizing 100-nm gate-length GaAs pseudomorphic power HEMTs. With a chip size of less than 2 mm2, this two-stage LNA achieves a small signal gain of more than 12 dB between 90 and 100 GHz, with 12.5-dB gain and 3.9-dB noise figure at 94 GHz. This is the best reported performance for power PHEMT-based LNAs at W-band, which is also comparable to the best results reported with more advanced InP or Metamorphic HEMT low noise technologies.enpseudomorphic HEMTpseudomorpher HEMTPHEMTW-Bandcoplanar waveguidekoplanarer Wellenleiterlow noiserauscharmamplifierVerstärkerMMIC100nm621667conference paper