Determination of band-edge offset by weak field hall measurement on MBE PbSe/PbEuSe multi-quantum well structures on KCl

Shi, Z.Z.ShiLambrecht, A.A.LambrechtTacke, M.M.Tacke2022-03-032022-03-031994https://publica.fraunhofer.de/handle/publica/18435410.1016/0038-1101(94)90367-0Weak field hall effect measurements between 34 and 300 K were applied to three PbSe/PbEuSe (Eg(PbEuSe) = 440 meV at 300 K) MQW samples on KCl. By calculating the quasi-Fermi energy levels the temperature dependent band-edge offsets were determined. The valence band offset Delta E gamma was found to be 65 meV at 34 K with a positive temperature coefficient of 0.68 meV/K. Thus Delta E gamma = 43 + 0.68 T(meV) is suggested.enHalbleiterheterojunctionHeterostruktursemiconductor621537Determination of band-edge offset by weak field hall measurement on MBE PbSe/PbEuSe multi-quantum well structures on KClBandsprünge von PbSe/PbEuSe MBE-Multiquantentrögen auf KCl aus Messung des Halleffekt in Schwachen Feldernjournal article