Stiebel, D.D.StiebelPichler, P.P.PichlerRyssel, H.H.Ryssel2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/333340We present new experimental results on the transient enhanced diffusion (TED) of boron after ion implantation. The investigation is focussed on effects that influence TED of shallow profiles in the absence of {311}-defects. Under these conditions, TED is mainly determined by the formation of boron-interstitial complexes (BIC). In addition, effects from the proximity of the surface become more and more important. Insight into the behavior of the dopant atoms is obtained by the comparison with simulations.enBorBICIonenimplantationbeschleunigte Diffusion670620530conference paper