Hurm, V.V.HurmBerroth, M.M.BerrothBosch, R.R.Bosch2022-03-082022-03-081989https://publica.fraunhofer.de/handle/publica/316485A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.encharge density profileCV-characteristicsGaAs/AlGaAs heterostructureLadungsdichteprofilparasitärer Leitungskanalparasitic conducting channelS-ParameterS-parameters621667conference paper