CC BY 4.0Kallinger, BirgitBirgitKallingerGobert, ChristianChristianGobertTitl, MaximilianMaximilianTitlKarhu, RobinRobinKarhuKöhler, JohannesJohannesKöhlerErlekampf, JürgenJürgenErlekampf2025-09-262025-09-262025https://publica.fraunhofer.de/handle/publica/496299https://doi.org/10.24406/publica-554610.24406/publica-5546Epitaxial growth ◼ Conventional 150 mm n-type 4H-SiC substrates from vendors A, B, C ◼ Epitaxy in AIXTRON planetary reactors (G5WW C, G10-SiC) - Si precursor: trichlorosilane (TCS) - Standard C precursor: ethene - New C precursor: methane (5.5 N, nitrogen < 4 ppm) - IsoPure methane with 99.99 at% 12 C and ultra-low nitrogen (< 3 ppm) ◼ Standard post-epitaxy characterization: - Epilayer thickness and doping profiles by FTIR-based method and CV - Defectivity of the epilayers by UVPL & DIC (Lasertec SICA 88) ◼ Advanced post-epitaxy characterization: - Isotope concentrations: secondary ion mass spectroscopy (SIMS) - Carrier lifetime measurements by µ-PCD - Deep level transient spectroscopy (DLTS, planned) Conclusion and outlook-◼ Methane successfully used as precursor: - Thickness and doping results comparable to ethene based processes - Growth rates up to 30 µm/h possible - Comparable defectivity to standard ethene process ◼ Next steps: - Higher growth rates up to 50 µm/h - IsoPure methane for higher 12 C content - Comparison trichlorosilane to tetrachlorosilaneenSilicon Carbide (SiC)DefectsEpitaxyCharacterizationGrowth rate600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaften::629 Andere Fachrichtungen der Ingenieurwissenschaftenposter