Cova, P.P.CovaMenozzi, R.R.MenozziDammann, MichaelMichaelDammannFeltgen, T.T.FeltgenJantz, W.W.Jantz2022-03-032022-03-032002https://publica.fraunhofer.de/handle/publica/20204710.1016/S0026-2714(02)00195-6The reliability of high power AlGaAs/InGaAs/GaAs PHEMTs has been investigated. The influences of high temperature and of elevated drain voltage have been studied separately, using long term operation at elevated temperature and a 23-hour drain-voltage step-stress at room temperature. Results pertaining to different combinations of gate length and gate-drain ledge are reported and discussed, indicating safe operation values and showing that a wider gate-drain recess increases the device reliability.enreliabilityZuverlässigkeitInAlAs/InGaAs PHEMThot electronheißer Ladungsträgerlife timeLebensdauerpower PHEMTLeistungs-PHEMTbreakdown voltageDurchbruchspannungaccelerated agingbeschleunigter Alterungstest621667journal article