Leib, J.J.LeibHansen, U.U.HansenMaus, S.S.MausFeindt, H.H.FeindtHauck, K.K.HauckZoschke, K.K.ZoschkeToepper, M.M.Toepper2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36920310.1109/ESTC.2010.5642923The use of borosilicate glass for anodic wafer bonding to silicon is well established in industry. In this paper we present a matured approach, where a microstructured borosilicate glass thin-film instead of a bulk glass wafer is used as anodic bond layer. A glass layer with a thickness of 3-5 m is sufficient for a stable bond at very moderate bond parameters with bond voltages in the range of 30-60 V at standard bond temperatures of around 300°C and below. This enables the use of anodic bonding also for sensitive devices.en621conference paper