Under CopyrightDorp, Joachim vomJoachim vomDorpBerberich, Sven E.Sven E.BerberichErlbacher, TobiasTobiasErlbacherBauer, A.J.A.J.BauerRyssel, HeinerHeinerRysselFrey, LotharLotharFrey2022-03-1123.2.20122011https://publica.fraunhofer.de/handle/publica/37352010.24406/publica-r-37352010.1109/PEDS.2011.6147217In this work, we present a monolithic RC-snubber for power electronic applications that outperforms state of the art RC-snubbers in terms of characteristic electrical parameters. The principle device structure as well as the process technology is presented. The outstanding properties of the device are a high capacitance per area (1.5 nF/mm2), a low temperature coefficient of the capacitance value (85 ppm/°C) and a low leakage current (<1 nA) for voltages up to 250 V. Characteristic electrical parameters of the single device and in a typical application are shown. In comparison to a SMD snubber, the monolithic RC-snubber shows a significant reduction of overvoltage during switching and enhanced electromagnetic noise suppression.encapacitancecapacitorresistanceresistorsiliconsnubberswitchcapacitance valuesdevice structureselectrical parameterelectromagnetic noiselow temperature coefficientslow-leakage currentover-voltagespower electronic applicationsprocess technologystate of the arttypical application670620530conference paper