Hoheisel, RaymondRaymondHoheiselDimroth, FrankFrankDimrothBett, Andreas W.Andreas W.BettMessenger, S.R.S.R.MessengerJenkins, P.P.P.P.JenkinsWalters, Robert J.Robert J.Walters2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/37984710.1016/j.solmat.2012.06.015Electroluminescence measured at different injection current densities is used to study the effect of particle irradiation on GaInP/GaInAs/Ge triple-junction solar cells. By employing the optoelectronic reciprocity relation, the irradiation-induced degradation in the J-V characteristics of all individual subcells and their underlying diode saturation parameters is derived. Also, the dependence of the solar cell irradiation response on the position of the irradiation-induced non-radiative recombination centers within the cell active region, i.e., the quasi-neutral regions and the space charge region, is discussed.enMaterialien - Solarzellen und TechnologieIII-V und Konzentrator-PhotovoltaikAlternative Photovoltaik-TechnologienIII-V Epitaxie und SolarzellenSolarzellen und Bauelemente670conference paper