Jäger, UlrichUlrichJägerMack, SebastianSebastianMackWufka, C.C.WufkaWolf, AndreasAndreasWolfBiro, DanielDanielBiroPreu, RalfRalfPreu2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23267610.1109/JPHOTOV.2012.2230685We compare homogeneous and selective emitters on monocrystalline silicon solar cells with passivated surfaces and present an analysis of the saturation current densities influencing the open-circuit voltage VOC and the fill factor FF. The cells' surfaces are passivated by a thin thermal oxide. Selective emitters are fabricated by laser doping from phosphosilicate glass. On both Czochralski-grown silicon (Cz-Si) as well as float zone silicon (FZ-Si), we find higher conversion efficiencies for the cells featuring a selective emitter. An efficiency up to 20.0% is reported on FZ-Si with an area of 148.4 cm2. For the selective emitter cells, 8 mV higher open-circuit voltages are found compared with the baseline. A saturation current analysis reveals that these cells exhibit a lower diode saturation current density of ideality 2 (J02), as well as improved shielding of the minorities in the emitter from the front contact. The selective emitter cells show a minor loss in short- circuit current density JSC of 0.5 \rel due to the presence of highly doped, illuminated areas. Front contact quality of the cells featuring a selective emitter is found to be superior compared with the cells with a homogeneously doped emitter.en621journal article