Fet, A.A.FetHäublein, V.V.HäubleinBauer, A.J.A.J.BauerRyssel, H.H.RysselFrey, L.L.Frey2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36967710.1063/1.35483592-s2.0-79251558103Effective work function instability of high-K/metal gate MOS stacks after high temperature treatment results in device threshold voltage shifts and is one of the problems associated with the gate-first integration of high-K dielectrics in the CMOS process flow. The exact reason for this instability is subject of intense debate. In this paper it is shown that a positive threshold voltage shift due to thermal treatment can be compensated by implanting the lanthanoids lanthanum or dysprosium into the high-K stack.en670conference paper