Bär, E.E.BärLorenz, J.J.LorenzRyssel, H.H.Ryssel2022-03-092022-03-092003https://publica.fraunhofer.de/handle/publica/343357For simulating superconformal copper deposition by chemical vapor deposition (C VD) or electroplating (EP), a model based on the curvature-enhanced accelerator coverage (CEAC) mechanism has been implemented. It allows to describe the phenomenon of enhanced growth rates at the bottom region of a feature, such as a vi a or a trench, by accumulation of an accelerating compound due to surface contraction resulting from layer growth. The mechanism can be used to model superconformal filling as experimentally observed for both CVD and EP of copper. Results for 3D simulations using this model are presented.eninterconnectprocess simulationsuperconformal depositionVerbindungsstrukturProzess-Simulationsuperkonforme Abscheidung670620530conference paper