Braunstein, J.J.BraunsteinTasker, P.J.P.J.TaskerHülsmann, A.A.HülsmannSchlechtweg, M.M.SchlechtwegKöhler, KlausKlausKöhlerBronner, WolfgangWolfgangBronnerHaydl, W.W.Haydl2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18375810.1049/el:19930569Distributed amplifiers were fabricated successfully with a gain of 8 dB plusminus 1 dB in the frequency range 5 - 75 GHz measured on-wafer. The associated input and output matching is better than - 10 dB. To the authors' knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. The MMICs were realised in coplanar waveguide technology.enamplifierHalbleiter-Wanderwellen-VerstärkerMODFETtraveling wave semiconductor amplifierVerstärker621667384journal article