Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC

Under CopyrightErlekampf, JürgenJürgenErlekampfKaminzky, DanielDanielKaminzkyRoßhirt, KatharinaKatharinaRoßhirtKallinger, BirgitBirgitKallingerRommel, MathiasMathiasRommelBerwian, PatrickPatrickBerwianFriedrich, JochenJochenFriedrichFrey, LotharLotharFrey2022-03-1310.10.20172017https://publica.fraunhofer.de/handle/publica/39795310.24406/publica-fhg-397953en670620530Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiCposter