Bach, H.-G.H.-G.BachSchlaak, W.W.SchlaakMekonnen, G.G.G.G.MekonnenSteingrüber, R.R.SteingrüberSeeger, A.A.SeegerPassenberg, W.W.PassenbergEbert, W.W.EbertJacumeit, G.G.JacumeitEckhard, T.T.EckhardZiegler, R.R.ZieglerBeling, A.A.BelingSchmauss, B.B.SchmaussMunk, A.A.MunkEngel, T.T.EngelUmbach, A.A.Umbach2022-03-092022-03-092001https://publica.fraunhofer.de/handle/publica/33903110.1109/ECOC.2001.9891092-s2.0-0035741703InP-based PIN TWA photoreceiver OEICs with monolithically integrated taper were fabricated, pack-aged into butt-coupled pig-tailed modules and characterized for 50 GHz operation at lambda =1.55 mu m. Cascode-type circuit schemes of the integrated travelling wave amplifier were realized for increased conversion gain of up to 85 V/W.eniii-v semiconductorsindium compoundsintegrated optoelectronicsmodulesoptical modulationoptical receiversp-i-n photodiodestravelling wave amplifiersphotoreceiver modulesrz modulation formatnrz modulation formatpin twa photoreceivermonolithically integrated taperbutt-coupled pig-tailed modulescascode-type circuit schemesintegrated travelling wave amplifieroeicspot size converter50 GHz40 Gbit/s1.55 micron621conference paper