Fukumoto, M.M.FukumotoYang, C.C.YangYu, W.W.YuPatzig, C.C.PatzigHöche, T.T.HöcheRuf, T.T.RufDenecke, R.R.DeneckeLorenz, M.M.LorenzGrundmann, M.M.Grundmann2022-03-062022-03-062020https://publica.fraunhofer.de/handle/publica/26609110.1039/d0tc03213aSn5O2(PO4)2 is a promising p-type transparent semiconducting oxide. Phase-pure triclinic Sn5O2(PO4)2 thin films were grown by pulsed laser deposition using a Sn2(P2O7) target with higher phosphorus content. The (001)-oriented growth of triclinic Sn5O2(PO4)2 on glass was achieved by means of a (111)-textured Y2O3 buffer layer. STEM-EDX and XPS revealed that the composition of the obtained film is near-stoichiometric, thus indicating a suitable semiconducting material. The bandgap of the triclinic Sn5O2(PO4)2 film was estimated to be as large as 3.87 eV, which is the first experimental evidence verifying a recent theoretical prediction by Q. Xu et al., Chem. Mater., 2017, 29, 2459 quite closely.en541journal article