Kravchenko, G.G.KravchenkoBagdahn, J.J.Bagdahn2022-03-102022-03-102005https://publica.fraunhofer.de/handle/publica/34950210.1109/ESIME.2005.1502841The paper analyzes delamination propagation and crack kinking between CMOS layers on the ultra thin silicon chip. Based on the fracture mechanics approach, a four-point bending specimen is analyzed with the help of the finite element modelling. Using the maximum hoop stress criterion, the crack kinking as the chip fracture initiation is predicted. Influence of T-stress on the crack kinking behaviour war also considered in the analysis.enCMOSdelaminationultra thin chipfinite element analysis531620conference paper