Pitris, S.S.PitrisVagionas, C.C.VagionasKanellos, G.T.G.T.KanellosKisacik, R.R.KisacikTekin, T.T.TekinBroeke, R.R.BroekePleros, N.N.Pleros2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/395480We experimentally demonstrate successful optical static RAM cell operation with READ/WRITE at 5Gbps and I/O wavelength diversity capabilities. The RAM cell incorporates an integrated SOA-MZI Access Gate and a monolithic InP Flip-Flop with coupled switches.enOptical static RAM cell using a monolithically integrated InP Flip-Flop and wavelength-encoded signalsconference paper