Binder, M.M.BinderGaller, B.B.GallerFuritsch, M.M.FuritschOff, J.J.OffWagner, J.J.WagnerZeisel, R.R.ZeiselKatz, S.S.Katz2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23412510.1063/1.48338952-s2.0-84888597709We have studied the electrical and optical characteristics of (AlGaIn)N multiple quantum well light-emitting diodes. Minimizing contact effects by utilizing platinum as p-contact metal, ideality factors as low as 1.1 have been achieved. In agreement with basic semiconductor theory, a correlation between ideality factor and small-current efficiency was found. We were able to emulate the experimental current-voltage characteristic over seven orders of magnitude utilizing a two diode model. This model enables a very good prediction of internal quantum efficiency at moderate current densities out of purely electrically derived parameters.en621journal article