Hackert-Oschätzchen, MatthiasMatthiasHackert-OschätzchenSchubert, AndreasAndreasSchubertPenzel, MichaelMichaelPenzelPlänitz, PhilippPhilippPlänitz2022-03-122022-03-122012https://publica.fraunhofer.de/handle/publica/377977Gallium nitride (GaN) and its related nitride alloys with special physical properties are in technical areas of high interest. The growing of gallium nitride boules on non-native sapphire or silicon carbide requires complicated mechanisms of defect reduction in the lattice structure. Thus the production of gallium nitride substrates is a challenge. Hydride Vapor Phase Epitaxy (HVPE) is a promising technology for the production of large GaN bouls. In this study COMSOL Multiphysics is used for the simulation of non-isothermal flow and the mass transport. In this study a pseudo-3D simulation of non-isothermal flow and mass transport have been performed to analyze the influence of the reactor geometry and several process parameters.enmultiphysics-simulationhydride vapor phase epitaxy reactornon-isothermal flowtransport of diluted species620670conference paper