Abdulazhanov, SukhrobSukhrobAbdulazhanovLe, Quang HuyQuang HuyLeLehninger, DavidDavidLehningerSünbül, AyseAyseSünbülKämpfe, ThomasThomasKämpfeGerlach, GeraldGeraldGerlach2024-10-012024-10-012024https://publica.fraunhofer.de/handle/publica/47592410.1109/DRC61706.2024.106052862-s2.0-85201056769The discovery of ferroelectricity in hafnium oxide has gained significant attention due to its detrimental role in modern microelectronics [1] . If doped with zirconium, Hf x Zr 1-x O 2 (HZO), it crystallizes into an orthorhombic ferroelectric phase at sufficiently lower temperatures [3] , which is important to meet the requirements on maximum anneal temperature for conventional Back-End-of-Line (BEoL) processes. This makes HZO an ideal candidate for use as a thin-film varactor with applications in RF and mmWave networks.enconference paper