Sah, R.E.R.E.SahRalston, J.D.J.D.RalstonWeisser, S.S.WeisserEisele, K.K.Eisele2022-03-032022-03-031995https://publica.fraunhofer.de/handle/publica/18594410.1063/1.114697We have developed a two-component chemically-assisted ion-beam etching (CAME) technique for dry-etching of high-speed multiple quantum well (MQW) laser mirrors. This two-component process relaxes several constraints in the dry-etching of AI containing opto-electronic device structures with Cl2 alone. The strained 3 x 100 My square meter In0.35 Ga0.65 As/GaAs undoped and p-doped 4-QW ridge waveguide lasers containing GaAs/AlAs binary short-period superlattice cladding layers with cavities fabricated by this CAME technique demonstrate record direct modulation bandwidths of 24 GHz(Ibias=25mA) and 33 Ghz (Ibis=65mA), respectively.enCAIBEdry-etchingMQW-LaserTrockenätzen621667journal article