Weber, A.A.WeberPoeckelmann, R.R.PoeckelmannKlages, C.-P.C.-P.Klages2022-03-082022-03-081996https://publica.fraunhofer.de/handle/publica/303507The process for forming TiN layers on a substrate using CVD in conjunction with N-contg. plasma gases, involves using Ti alcoholate(s) of formula Ti(OR)4 as precursor, where R = alkyl, and working in the remote or downstream region of the plasma. USE - Used as diffusion barriers in very highly integrated circuits. ADVANTAGE - The process gives TiN layers with excellent conformity and gives virtually complete covering of edges.de608667Verfahren zur Herstellung von TiN-Schichten und die mit diesem Verfahren hergestellte SchichtForming titanium nitride layer on substrate using CVD - by using titanium alcoholate as precursor and nitrogen -contg. plasma gases, giving titanium nitride layers of excellent conformity.patent1995-19506579